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MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density

机译：在轴上蓝宝石衬底上的N极性GaN的mOCVD生长：alN的影响 GaN表面小丘密度上的成核层

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摘要

We report on the impact of growth conditions on surface hillock density ofN-polar GaN grown on nominally on-axis (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Large reduction in hillock densitywas achieved by implementation of an optimized high temperature AlN nucleationlayer and use of indium surfactant in GaN overgrowth. A reduction by more thana factor of five in hillock density from 1000 to 170 hillocks/cm$^{-2}$ wasachieved as a result. Crystal quality and surface morphology of the resultantGaN films were characterized by high resolution x-ray diffraction and atomicforce microscopy and found to be relatively unaffected by the bufferconditions. It is also shown that the density of smaller surface features isunaffected by AlN buffer conditions.

机译：我们报告了生长条件对通过金属有机化学气相沉积（MOCVD）在标称同轴（0001）蓝宝石衬底上生长的N极性GaN的表面小丘密度的影响。通过实现优化的高温AlN成核层并在GaN过度生长中使用铟表面活性剂，实现了岗岗密度的大幅降低。结果实现了小丘密度从1000降低到170小丘/ cm 2 ^ {-2} $，降低了5倍以上。所得GaN薄膜的晶体质量和表面形貌通过高分辨率x射线衍射和原子力显微镜表征，并发现相对不受缓冲条件的影响。还显示出较小表面特征的密度不受AlN缓冲条件的影响。

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Marini, Jonathan; Leathersich, Jeffrey; Mahaboob, Isra; Bulmer, John; Newman, Neil; F.; Shahedipour-Sandvik;
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年度 2017
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机译：使用GaN，AlGaN和AlN缓冲层在r面蓝宝石衬底上进行a面GaN膜的MOCVD生长的比较研究
2. Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers [J] . J. N. Dai, Z. H. Wu, C. H. Yu, Journal of Electronic Materials . 2009,第9期

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3. N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality [J] . Physica, B. Condensed Matter . 2020,第期

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4. Comparison of AlGaN/GaN HEMTs Grown and Fabricated on Sapphire Substrate with AlN and GaN Nucleation Layers [C] . N. Gao, Y. L. Fang, J. Y. Yin, China International Forum on Solid State Lighting . 2017

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5. Validation of Vegard's Law for Lattice Matching InxAl 1-xN to GaN and the MOCVD Growth of AlxGa1-xN/AlN for Deep UV LEDs [D] . Foronda, Humberto Miguel. 2017

机译：晶格匹配InxAl 1-xN与GaN的Vegard定律的验证以及用于深紫外LED的AlxGa1-xN / AlN的MOCVD生长
6. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate [O] . Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, 2014

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7. Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD [O] . Çörekçi, S., Öztürk, M.K., Bengi, A., 2011

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8. MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates [R] . Weyher, J. L. 2005

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MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density

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